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| DG417L/418L/419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches FEATURES D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance--r ON: 14 W D Fast Switching--tON: 28 ns --tOFF: 13 ns D TTL, CMOS Compatible D Low Leakage: t100 pA BENEFITS D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing APPLICATIONS D D D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing DESCRIPTION The DG417L/418L/419L are low voltage pin-for-pin compatible companion devices to the industry standard DG417/418/419 with improved performance Combining high speed (tON: 28 ns), flat rON over the analog signal range (6 W), minimal insertion lose (up to 100 MHz), and excellent crosstalk and off-isolation performance ( - 70 dB at 1 MHz), the DG417L/418L/419L are ideally suited for audio and video signal switching. The DG417L and DG418L respond to opposite control logic as shown in the Truth Table. The DG419L has an SPDT configuration. Using BiCMOS wafer fabrication technology allows the DG417L/418L/419L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with "3 to "6 V. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417L/DG418L Dual-In-Line, MSOP-8 and SOIC-8 NC/NO * GND V+ 1 2 3 4 Top View *Not Connected 8 7 6 5 COM VIN VL DG419L Dual-In-Line, MSOP-8 and SOIC-8 COM NC GND V+ 1 2 3 4 Top View 8 7 6 5 NO VIN VL TRUTH TABLE Logic 0 1 TRUTH TABLE DG419L DG418L OFF ON DG417L ON OFF Logic 0 1 SW1 ON OFF SW2 OFF ON ORDERING INFORMATIONDG417L/418L Temp Range Package 8-Pin 8 Pin Narrow SOIC -40 to 85_C 40 8-Pin 8 Pin MSOP ORDERING INFORMATIONDG419L Temp Range -40 to 85_C 40 Part Number DG417LDY DG418LDY DG417LDQ DG418LDQ DG417LAK/883 DG417LAK Package 8-Pin Narrow SOIC 8-Pin MSOP 8-Pin 8 Pin CerDIP Part Number DG419LDY DG419LDQ DG419LAK/883 -55 to 125_C 55 DG419LAK -55 to 125_C 55 8-Pin 8 Pin CerDIP DG418LAK/883 DG418LAK Document Number: 71763 S-03423--Rev. C, 03-Mar-03 www.vishay.com 1 DG417L/418L/419L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V I, N Power Dissipation (Package)b 8-Pin MSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW 8-Pin SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C d. Derate 12 mW/_C above 75_C COM, NC, NOa . . . . -0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (AK, DQ, DY Suffix) . . . . . . . . . . . -65 to 150_C SPECIFICATIONS (SINGLE SUPPLY 12 V) Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee On-Resistance VANALOG rON INO(off), INC(off) ICOM(off) ICOM(on) V+ = 10.8 V, V - = 0 V INO, INC = 5 mA, VCOM = 2/9 V VCOM = 1/11 V VNO, VNC = 11/1 V Full Room Full Room Full Room Full Room Full 13 -1 -15 -1 -15 -1 -15 0 12 20 32 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 0 12 20 23.5 1 10 1 10 1 10 nA V W A Suffix Limits -55 to 125_C D Suffix Limits -40 to 85_C Symbol V+ = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Switch Off Leakage Current Channel On Leakage Current VNO, VNC = VCOM = 11/1 V Digital Control Input Current IINL or IINH Full 0.01 -1.5 1.5 -1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Channel On Capacitancee tON tOFF tD QINJ OIRR XTALK CNO(off), CNC(off) CON RL = 300 W , CL = 35 pF VNO, VNC = 5 V See Figure 2 DG419L Only, VNC, VNO = 5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF f = 1 MHz Room Full Room Full Room Room Room Room Room VIN = 0 or V+ f = 1 MHz V+, Room 15 28 13 43 50 31 35 43 46 31 32 ns 13 1 -71 -71 5 pF dB pC Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IVIN = 0 or VL IL IGND Room Full Room Full Room Full Room Full 0.02 -0.002 0.002 -0.002 -1 -7.5 -1 -7.5 1 7.5 -1 -5 Document Number: 71763 S-03423--Rev. C, 03-Mar-03 1 7.5 -1 -5 1 5 1 5 mA www.vishay.com 2 DG417L/418L/419L Vishay Siliconix SPECIFICATIONS (DUAL SUPPLY "5 V) Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee On-Resistance VANALOG rON INO(off), INC(off) ICOM(off) ICOM(on) V+ = 5 V, V - = -5 V INO, INC = 5 mA, VCOM = "3.5 V V+ = 5.5 V, V - = -5.5 V VCOM = "4 5 V VNO, "4.5 V, VNC = #4.5 V V+ = 5.5 V, V - = -5.5 V VNO, VNC = VCOM = "4.5 V Full Room Full Room Full Room Full Room Full 14 -1 -15 -1 -15 -1 -15 -5 5 18.5 30 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 -5 5 18.5 21 1 10 1 10 1 10 nA V W A Suffix Limits -55 to 125_C D Suffix Limits -40 to 85_C Symbol V+ = 5 V, V - = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Switch Off Leakage Currenta Channel On Leakage Currenta Digital Control Input Currenta IINL or IINH Full 0.05 -1.5 1.5 -1 1 mA Dynamic Characteristics Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Transition Time Charge Injectione tON tOFF tD tTRANS QINJ OIRR XTALK CNO(off) CNC(off) CON RL = 300 W , CL = 35 pF VNO, VNC = "3 5 V "3.5 See Figure 2 DG419L Only, VNO, VNC = 3.5 V RL = 300 W , CL = 35 pF RL = 300 W, CL = 35 pF VS1 = "3.5 V, VS2 = #3.5 V Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF f = 1 MHz Room Full Room Full Room Room Room Room Room Room f = 1 MHz Room 15 30 16 10 33 3 -71 -76 5.2 pF dB 47 47 pC 41 50 32 36 41 44 32 33 ns Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Channel On Capacitancee Power Supplies Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or VL IL IGND Room Full Room Full Room Full Room Full 0.03 -0.002 0.002 -0.002 -1 -7.5 -1 -7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 mA SPECIFICATIONS (SINGLE SUPPLY 5 V) Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee On-Resistancee VANALOG rON V+ = 4.5 V, INO, INC = 5 mA VCOM = 1 V, 3.5 V Full Room Full 26 5 36.5 50 5 36.5 40.5 V W A Suffix Limits -55 to 125_C D Suffix Limits -40 to 85_C Symbol V+ = 5 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Document Number: 71763 S-03423--Rev. C, 03-Mar-03 www.vishay.com 3 DG417L/418L/419L Vishay Siliconix SPECIFICATIONS (SINGLE SUPPLY 5 V) Test Conditions Unless Specified Parameter Symbol V+ = 5 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits -55 to 125_C D Suffix Limits -40 to 85_C Tempb Room Full Room Full Room Room Typc 37 16 19 0.4 Mind Maxd 49 60 31 35 Mind Maxd 49 54 31 32 Unit Dynamic Characteristics Turn-On Timee Turn-Off Timee Break-Before-Make Time Delaye Charge Injectione tON tOFF tD QINJ RL = 300 W , CL = 35 pF VNO, VNC = 3.5 V, See Figure 2 DG419L Only, VNO, VNC = 3.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 1 nF ns pC Power Supplies Positive Supply Currente Negative Supply Currente Logic Supply Currente Ground Currente I+ IVIN = 0 or VL IL IGND Room Full Room Full Room Full Room Full 0.02 -0.002 0.002 -0.002 -1 -7.5 -1 -7.5 1 7.5 -1 -5 1 7.5 -1 -5 1 5 1 5 mA SPECIFICATIONS (SINGLE SUPPLY 3 V) Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee On-Resistance VANALOG rON INO(off), INC(off) ICOM(off) ICOM(on) V+ = 2.7 V, V - = 0 V INO, INC = 5 mA, VCOM = 0.5, 2.2 V V+ = 3.3 V, V - = 0 V VCOM = 1, 2 V, VNO, VNC = 2, 1 V V+ = 3.3 V, V - = 0 V VNO, VNC = VCOM = 1, 2 V Full Room Full Room Full Room Full Room Full 47 -1 -15 -1 -15 -1 -15 0 3 70 80 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 0 3 70 75 1 10 1 10 1 10 nA V W A Suffix Limits -55 to 125_C D SuffixLimits -40 to 85_C Symbol V+ = 3 V, V - = 0 V VL = 3 V, VIN = 2.0 V, 0.4 Vf Tempb Typc Mind Maxd Mind Maxd Unit Switch Off Leakage Currenta Channel On Leakage Currenta Digital Control Input Currenta IINL or IINH Full 0.005 -1.5 1.5 -1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Channel On Capacitancee tON tOFF tD QINJ OIRR XTALK CNO(off), CNC(off) CD(on) RL = 300 W , CL = 35 pF VNO, VNC = 1.5 V See Figure 2 DG419L Only, VNO, VNC = 1.5 V RL = 300 W , CL = 35 pF Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF f = 1 MHz Room Full Room Full Room Room Room Room Room f = 1 MHz Room 16 65 26 33 1 -71 -77 5.6 pF dB pC 75 95 41 45 75 85 41 43 ns Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com Document Number: 71763 S-03423--Rev. C, 03-Mar-03 4 DG417L/418L/419L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage 60 T = 25_C IS = 5 mA r ON - On-Resistance ( W ) V+ = 2.7 V 80 70 60 A 50 40 30 20 10 0 0 3 6 9 12 0 1 2 3 4 5 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) E D B C A B C D E IS = 5 mA V+ = 2.7 V A = 125_C B = 85_C C = 25_C D = -40_C E = -55_C V+ = 4.5 V rON vs. Analog Voltage and Temperature 50 r ON - On-Resistance ( W ) 40 30 V+ = 4.5 V 20 V+ = 10.8 V 10 0 30 rON vs. Analog Voltage and Temperature V" = "5 V IS = 5 mA I+ - Supply Current (nA) 125_C Supply Current vs. Temperature 10000 V" = "5 V VIN = 0 V 25 r ON - On-Resistance ( W ) 20 85_C 15 25_C -40_C -55_C 1000 10 5 0 -5 -3 -1 1 3 5 VCOM - Analog Voltage (V) 100 -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C) Supply Current vs. Input Switching Frequency 10 m 1m I+ - Supply Current (nA) 100 m 10 m 1m 100 n 10 n 1 10 1 -55 1000 Leakage Current (pA) 10000 Leakage Current vs. Temperature V+ = 12 V V- = 0 V 100 ICOM(on) ICOM(off) 10 100 1K 10 K 100 K 1M 10 M -35 -15 5 25 45 65 85 105 125 Input Switching Frequency (Hz) Document Number: 71763 S-03423--Rev. C, 03-Mar-03 Temperature (_C) www.vishay.com 5 DG417L/418L/419L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Leakage vs. Analog Voltage 40 V+ = 12 V V- = 0 V Leakage Current (pA) 20 ICOM(off)/ICOM(on) 0 INO(off)/INC(on) 90 80 t ON , t OFF - Switching Time (ns) 70 60 50 40 30 20 10 -40 0 2 4 6 8 10 12 VCOM, VNO, VNC - Analog Voltage (V) 0 -55 tON V+ = 5 V tON V+ = 12 V tOFF V+ = 5 V tOFF V+ = 12 V -35 -15 5 25 45 65 85 105 125 tOFF V+ = 3 V tON V+ = 3 V Switching Time vs. Temperature and Single Supply Voltage -20 Temperature (_C) Switching Time vs. Temperature and Dual Supply Voltage 80 70 t ON , t OFF - Switching Time (ns) Loss, OIRR, X TALK (dB) 60 50 40 30 tOFF V+ = "3 V 20 10 0 -55 tOFF V+ = "6 V -110 -35 -15 5 25 45 65 85 105 125 0.1 tOFF V+ = "5 V tON V+ = "3 V tON V+ = "5 V 10 Insertion Loss, Off -Isolation Crosstalk vs. Frequency Loss -10 -30 -50 OIRR V+ = 3 V V- = 0 V RL = 50 W tON V+ = " 6 V -70 -90 1 10 Frequency (Hz) 100 1000 Temperature (_C) Switching Threshold vs. Supply Voltage 2.0 1.8 VT - Switching Threshold (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 VL = V+ 12 10 Q - Charge Injection (pC) 8 6 4 2 0 -2 -4 -6 -8 -10 -12 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -6 Charge Injection vs. Analog Voltage V+ = 12 V V+ = 5 V V = "5 V V+ = 3 V -4 -2 0 2 4 6 8 10 12 V+ - Supply Voltage (V) VCOM - Analog Voltage (V) Document Number: 71763 S-03423--Rev. C, 03-Mar-03 www.vishay.com 6 DG417L/418L/419L Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VVIN Level Shift/ Drive V+ GND D V- Figure 1. TEST CIRCUITS VL V+ Logic Input Switch Output VOUT RL 300 W CL 35 pF VINH VINL 50% tr <5 ns tf <5 ns tOFF Switch Input VIN VL NO or NC IN GND V+ COM VOUT 90% 0.9 x VOUT V- Switch Output 0V tON VCL (includes fixture and stray capacitance) VOUT = VIN RL RL + rON Note: Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time VL V+ Logic Input VO RL 300 W CL 35 pF VINH VINL tr <5 ns tf <5 ns VL VNO VNC NO NC IN GND V+ COM VNC = VNO VO Switch Output 0V 90% V- tD tD VCL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG419L) Document Number: 71763 S-03423--Rev. C, 03-Mar-03 www.vishay.com 7 DG417L/418L/419L Vishay Siliconix TEST CIRCUITS +5 V VL NO or NC VS1 VS2 NC or NO RL 300 W VCL 35 pF VS1 V01 Switch Output VS2 V02 10% 90% V+ COM VO Logic VINH Input VINL 50% +15 V tr <5 ns tf <5 ns tTRANS tTRANS IN GND VCL (includes fixture and stray capacitance) VO = VS RL RL + rON Figure 4. Transition Time (DG419L) VL V+ VO Rg VL COM IN GND VV+ NO or NC CL 1 nF VO IN OFF ON OFF DVO Vg Q = DVO x CL IN dependent on switch configuration Input polarity determined by sense of switch. VVIN = 0 - V+ Figure 5. Charge Injection VL C VL VS Rg = 50 W IN 0 V or 2.4 V NC or NO VOUT VIN NO or NC COM V+ C V+ 50 W GND VOUT VIN V- C XTALK Isolation = 20 log C = RF bypass V- Figure 6. Crosstalk (DG419L) www.vishay.com 8 Document Number: 71763 S-03423--Rev. C, 03-Mar-03 DG417L/418L/419L Vishay Siliconix TEST CIRCUITS VL VL V+ V+ VL C C VL V+ C C V+ NO or NC Rg = 50 W IN 0V, 2.4 V GND COM COM Meter RL 50 W 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent C f = 1 MHz V- C GND NO or NC V- VOff Isolation = 20 log C = RF Bypass VCOM VNO/NC V- Figure 7. Off Isolation Figure 8. Source/Drain Capacitances Document Number: 71763 S-03423--Rev. C, 03-Mar-03 www.vishay.com 9 This datasheet has been download from: www..com Datasheets for electronics components. |
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